? 2011 ixys all rights reserved 1 - 4 20110307 gmm 3x160-0055x2 ixys reserves the right to change limits, test conditions and dimensions. v dss = 55 v i d25 = 150 a r dson typ. = 2.2 mw three phase full bridge with trench mosfets in dcb isolated high current package applications ac drives ? in automobiles - electric power steering - starter generator ? in industrial vehicles - propulsion drives - fork lift drives ? in battery supplied equipment features ? mosfets in trench technology: - low r dson - optimized intrinsic reverse diode ? package: - high level of integration - high current capability - aux. terminals for mosfet control - terminals for soldering or welding connections - isolated dcb ceramic base plate with optimized heat transfer ? space and weight savings symbol conditions characteristic values (t vj = 25 c, unless otherwise specifed) min. typ. max. r dson 1) on chip level at t vj = 25c v gs = 10 v t vj = 125c 2.2 3.7 3.1 5.3 mw mw v gs(th) v ds = 20 v; i d = 1 ma 2.0 4.0 v i dss v ds = v dss ; v gs = 0 v t vj = 25c t vj = 125c 50 1 a a i gss v gs = 20 v; v ds = 0 v 0.2 a q g q gs q gd v gs = 10 v; v ds = 28 v; i d = 100 a 110 35 25 nc nc nc t d(on) t r t d(off) t f inductive load v gs = 10 v; v ds = 24 v i d = 100 a; r g = 39 ?; t j = 125c 100 110 500 100 ns ns ns ns e on e off e recoff 0.12 0.53 0.01 mj mj mj r thjc r thjh with heat transfer paste (ixys test setup) 1.3 1.0 1.6 k/w k/w 1) v ds = i d (r ds(on) + 2r pin to chip ) mosfets symbol conditions maximum ratings v dss t vj = 25c to 150c 55 v v gs 20 v i d25 i d90 t c = 25c t c = 90c 150 115 a a i f25 i f90 t c = 25c (diode) t c = 90c (diode) 140 90 a a s2 l3 g2 s1 g1 s3 g3 s4 g4 s5 g5 s6 g6 l3+ l2 l1 l1+ l2+ l3- l1- l2- t e n t a t i v e
? 2011 ixys all rights reserved 2 - 4 20110307 gmm 3x160-0055x2 ixys reserves the right to change limits, test conditions and dimensions. component symbol conditions maximum ratings i rms per pin in main current paths (p+, n-, l1, l2, l3) may be additionally limited by external connections 2 pins for output l1, l2, l3 75 a t j t stg -55...+175 -55...+125 c c v isol i isol < 1 ma, 50/60 hz, f = 1 minute 1000 v~ f c mounting force with clip 50 - 250 n symbol conditions characteristic values min. typ. max. r pin to chip 1) tbd mw c p coupling capacity between shorted pins and back side metallization 160 pf weight 25 g 1) v ds = i d (r ds(on) + 2r pin to chip ) source-drain diode symbol conditions characteristic values (t j = 25c, unless otherwise specifed) min. typ. max. v sd (diode) i f = 80 a; v gs = 0 v 0.9 1.2 v t rr q rm i rm i f = 100 a; -di f /dt = 800 a/s v r = 24 v; t j = 125c 38 0.45 22 ns c a t e n t a t i v e
? 2011 ixys all rights reserved 3 - 4 20110307 gmm 3x160-0055x2 ixys reserves the right to change limits, test conditions and dimensions. leads ordering part name & packing unit marking part marking delivering mode base qty. ordering code smd standard gmm 3x160-0055x2 - smd gmm 3x160-0055x2 blister 28 507 504 t e n t a t i v e
? 2011 ixys all rights reserved 4 - 4 20110307 gmm 3x160-0055x2 ixys reserves the right to change limits, test conditions and dimensions. t e n t a t i v e
|
